Thin film transistors

H - Electricity – 01 – L

Patent

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H01L 21/425 (2006.01) H01L 29/10 (2006.01) H01L 29/786 (2006.01)

Patent

CA 1120612

IMPROVEMENTS IN THIN FILM TRANSISTORS Abstract of the Disclosure A thin film transistor has a semiconductor layer, an insulating layer and source, drain and gate electrodes. The improvement comprises creating an enhanced conductivity layer in the semiconductor by ion implantation or diffusion or phased deposition. The benefits of the enhanced conductivity layer are that transistor action is obtained without the conventional annealing step and D.C. stability is much improved. -i-

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