Method of forming a silicon nitride article

Details Method of forming a silicon nitride article Method of forming a silicon nitride article

C - Chemistry, Metallurgy

01

B

23/195

C01B 21/06 (2006.01) C04B 35/591 (2006.01)

Patent

CA 1084241

METHOD OF FORMING A SILICON NITRIDE ARTICLE ABSTRACT OF THE DISCLOSURE A method for forming a silicon nitride article is set forth. An article having at least some silicon par- ticles therein is formed in a manner which provides a degree of porosity for the article. The silicon particles of the article are reactable with nitrogen to form silicon nitride. The article is heated to a temperature below a reaction temperature at which nitrogen gas reacts with the silicon particles. The article is surrounded with an atmosphere containing at least some nitrogen gas. A reaction zone is established on at least a portion of the surface area of the article. The reaction zone has a temperature above the reaction temperature whereby the silicon particles in the reaction zone are reacted with the nitrogen gas to form silicon nitride. The reaction zone is moved from the surface of the article into the interior of the article whereby the article is progressively nitrided inwardly into its bulk from the surface thereof.

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