G - Physics – 01 – R
Patent
G - Physics
01
R
356/117
G01R 31/26 (2006.01) G01R 19/155 (2006.01) G01R 31/27 (2006.01)
Patent
CA 1300281
Abstract of the Disclosure Diffusion layers are formed in a surface region of an N-type substrate. The diffusion layers are intercon- nected by means of an A? wiring layer. A P-well is formed in the substrate. A power source potential is connected to the substrate and a reference potential is connected to the P-well 17. The A? wiring layer is con- nected to the power source potential via the substrate to detect the power source potential.
584287
Kabushiki Kaisha Toshiba
Marks & Clerk
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