H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/133, 356/138
H01L 21/768 (2006.01)
Patent
CA 1325685
METHOD FOR CONNECTING DEVICES ON AN INTEGRATED CIRCUIT SUBSTRATE TO A METALLIZATION LAYER ABSTRACT OF THE DISCLOSURE A method for connecting devices on an inte- grated circuit substrate to a metallization layer, where- in a thin layer of a dielectric material is deposited on the substrate, and openings are formed in the di- electric layer wherein electrical connection is to be made to the substrate. A metal barrier layer then is deposited selectively in the openings of the dielectric layer, the barrier layer completely covering the exposed portions of the substrate. A pillar metal layer then may be deposited as a blanket coating over the dielectric layer and over the portions of the barrier layer covering the exposed portions of the substrate. The pillar metal layer is etched for forming metal pillars extending from the exposed portions of the substrate. The sub- strate then is planarized by depositing a dielectric layer and etching it back for exposing the pillars for coupling to a later deposited metallization layer.
589772
Kulkarni Vivek D.
National Semiconductor Corporation
Smart & Biggar
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