G - Physics – 03 – F
Patent
G - Physics
03
F
358/11, 96/225
G03F 7/20 (2006.01) G03F 7/095 (2006.01)
Patent
CA 1326155
Abstract A method of reproducing sub-micron images in a first imaging layer. A second imaging layer is deposited on an etch-stop film formed on the first layer, and the second imaging layer is exposed to an E-beam at low dose. The resulting standing wave exposure pattern is converted into a corresponding topology pattern having peaks and valleys by exposure to a wet developer. Ions are implanted through the second imaging layer into portions of the first imaging layer below the valley portions of the standing wave topology pattern. The second imaging layer is removed without appreciably attacking the etch-stop layer, and then the etch stop layer is removed without appreciably attacking the first imaging layer. The first imaging layer is anisotropically etched in an O2 RIE, the implanted regions serving as an etch mask. The process results in the formation of small images at high throughput.
556672
International Business Machines Corporation
Saunders Raymond H.
LandOfFree
High resolution e-beam lithographic technique does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High resolution e-beam lithographic technique, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High resolution e-beam lithographic technique will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1171497