Semiconductor laser with lateral injection

Details Semiconductor laser with lateral injection Semiconductor laser with lateral injection

H - Electricity

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345/32

H01S 5/40 (2006.01) H01S 5/042 (2006.01) H01S 5/227 (2006.01) H01S 5/34 (2006.01)

Patent

CA 1241421

ABSTRACT: In a semiconductor laser with iso-electronic dop- ing or with a quantum-well structure the efficiency is con- siderably increased by lateral injection. For this purpose, the active region (3) is composed of active layers (4) and barrier layers (5) which are laterally bounded by semicon- ductor zones (6, 7), preferably degenerate, which inject charge carriers in the longitudinal direction of the active layers (4). The population inversion in the active layers (4) is further increased in that superinjection occurs at the transition with the degenerate zones (6, 7).

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