Power transistor drive circuit with improved short circuit...

Details Power transistor drive circuit with improved short circuit... Power transistor drive circuit with improved short circuit...

H - Electricity

03

K

323/10

H03K 17/08 (2006.01) H03K 17/082 (2006.01)

Patent

CA 1322023

15CT-03195 POWER TRANSISTOR DRIVE CIRCUIT WITH IMPROVED SHORT CIRCUIT PROTECTION ABSTRACT OF THE DISCLOSURE A gate drive circuit for an insulated gate bipolar transistor initially drives the gate to a first voltage potential which causes the transistor to partially turn on. A sensor detects when the transistor saturates, at which point the gate drive voltage is increased to increase the conductivity of the transistor and reduce its saturation voltage drop. If, however, a load coupled to the transistor is short circuited, the transistor will never reach saturation and will remain partially turned on at a point where it has increased short circuit current handling capability. In addition, once the transistor has been fully turned on, should a short circuit load condition occur, the transistor will drop out of saturation causing the drive circuit to reduce the gate voltage to increase the short circuit current handling capability of the transistor.

614079

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