Semiconductor ohmic contact

Details Semiconductor ohmic contact Semiconductor ohmic contact

H - Electricity

01

L

356/174

H01L 29/45 (2006.01) H01L 21/285 (2006.01) H01L 29/205 (2006.01)

Patent

CA 1166764

YO980-032 SEMICONDUCTOR OHMIC CONTACT Abstract An ohmic contact to intermetallic semiconductors with a resistance of much less than 10-6 ohm cm2 can be provided by introducing between the semiconductor and an external metal contact an atomically compatible barrier-free graded layer of a conductor having at the interface with a metal external contact an energy gap width of the semiconductor less than 0.5 electron volts. An ohmic contact for gallium arsenide can be provided by a graded region of indium gallium arsenide that decreases to indium arsenide at the interface with a metal.

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