Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

H - Electricity

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148/2.8

H01L 21/22 (2006.01) H01L 21/28 (2006.01) H01L 29/49 (2006.01)

Patent

CA 1176142

PHN 9829 7 ABSTRACT: An undoped polycrystalline silicon layer is pro- vided on an electrically insulating layer at the surface of a semiconductor body and a metal layer, for example of molybdenum, is provided on the silicon layer. After heat- ing to convert part of the silicon layer into a metal sili- cide layer a dopant, for example phosphorus, is introduced into the polycrystalline layer through the silicide layer. This method can be used to make an insulated gate field effect device where the gate comprises a double layer structure of metal silicide on polycrystalline silicon.

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