Method of manufacturing a high-voltage bipolar transistor

Details Method of manufacturing a high-voltage bipolar transistor Method of manufacturing a high-voltage bipolar transistor

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Patent

CA 1215480

11 ABSTRACT: A method of manufacturing a high-voltage bipolar transistor in an island formed by means of isolating separ- ation walls in a layer structure comprising two super- imposed epitaxial layers of opposite conductivity types, carried by a substrate. This method is characterized in that there is deposited above the second epitaxial layer a third epitaxial layer of the same conductivity type as the first layer, and in that the separation walls are obtained from two parts, the first part being formed before the deposition of the third epitaxial layer and the second part being formed after the deposition of the layer.

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