Folded extended window field effect transistor

Details Folded extended window field effect transistor Folded extended window field effect transistor

H - Electricity

01

L

356/126

H01L 21/28 (2006.01) H01L 21/285 (2006.01) H01L 21/336 (2006.01) H01L 21/768 (2006.01)

Patent

CA 1284235

Abstract A gate electrode having an insulating top layer as well as insulating sidewall spacers permits the source and drain regions to be electrically contacted through windows directly above the source and drain regions formed in a window pad layer. The window pad layer may also be used as a sublevel interconnect.

584407

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