Barrier layer arrangement for conductive layers on silicon...

Details Barrier layer arrangement for conductive layers on silicon... Barrier layer arrangement for conductive layers on silicon...

H - Electricity

01

L

356/179

H01L 39/24 (2006.01) H01L 21/32 (2006.01)

Patent

CA 1293824

BARRIER LAYER ARRANGEMENT FOR CONDUCTIVE LAYERS ON SILICON SUBSTRATES Abstract of the Disclosure A barrier layer triad intended to protect a silicon substrate and an overlying conductive layer from mutual contamination is disclosed as well as a process for its preparation. The barrier layer triad is comprised of a first triad layer located adjacent the silicon substrate consisting essentially of silica, a third triad layer remote from the silicon substrate consisting essentially of at least one Group 4 heavy metal oxide, and a second triad layer interposed between the first and third triad layers consisting essentially of a mixture of silica and at least one Group 4 heavy metal oxide.

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