Process for fabricating non-encroaching planar insulating...

H - Electricity – 01 – L

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H01L 21/76 (2006.01) H01L 21/316 (2006.01) H01L 21/762 (2006.01)

Patent

CA 1188011

A PROCESS FOR FABRICATING NON-ENCROACHING PLANAR INSULATING REGIONS IN INTEGRATED CIRCUIT STRUCTURES ABSTRACT OF THE DISCLOSURE A method for fabricating insulating regions in an integrated circuit structure is disclosed in which the insu- lating regions do not encroach upon the surrounding inte- grated circuit and in which a substantially planar surface across the top of the insulating material and the substrate is created. The method includes the steps of removing por- tions of the substrate wherever the insulating regions are to be formed, beginning to deposit insulating material across the substrate and in the openings created, and, while con- tinuing to deposit insulating material simultaneously remov- ing insulating material from generally horizontal surfaces and redepositing it on generally vertical surfaces of the substrate and the openings until a planar surface results.

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