Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

H - Electricity

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356/151

H01L 21/76 (2006.01) H01L 21/762 (2006.01) H01L 21/763 (2006.01)

Patent

CA 1217576

METHOD OF PRODUCING A SEMICONDUCTOR DEVICE ABSTRACT OF THE DISCLOSURE A semiconductor device of transistors, each of which is surrounded with a field oxide film, uses a dielectric isolation structure of a groove filled with an insulating material instead of a PN junction isolation structure. The field oxide film is formed by selectively oxidizing an epitaxial layer, then the groove extending through the epitaxial layer and a buried layer is formed. After the surface of the groove is covered with an insulating film, e.g., a thermal oxide film by oxidizing the surface, the groove is filled with the filler material.

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