Silicon oxynitride passivated semiconductor device and...

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H - Electricity

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356/171, 356/179

H01L 21/316 (2006.01) C23C 16/30 (2006.01) H01L 21/314 (2006.01) H01L 21/318 (2006.01) H01L 31/0216 (2006.01) H01L 31/103 (2006.01)

Patent

CA 1259530

SILICON OXYNITRIDE PASSIVATED SEMICONDUCTOR BODY AND METHOD OF MAKING SAME ABSTRACT OF THE DISCLOSURE A semiconductor body with an improved passivating layer is disclosed. In one embodiment, the body is a device comprising a semiconductor material having regions of opposite conductivity types which form a semiconductor junction therebetween which extends to a surface of the device. The passivating layer, comprising silicon oxynitride having a refractive index between about 1.55 and 1.75 and a substantial hydrogen content, overlies the surface at the junction. Also disclosed is a method for fabricating such a device wherein the vapor deposition of the passivating layer is carried out at low temperatures from an ambient having a ratio of silicon-containing to oxygen- and nitrogen-containing precursors of between about 1:1.67 and 1:5.

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