Monolithically integrated distributed bragg reflector laser

Details Monolithically integrated distributed bragg reflector laser Monolithically integrated distributed bragg reflector laser

H - Electricity

01

S

345/32

H01S 5/125 (2006.01)

Patent

CA 1210122

ABSTRACT SEMICONDUCTOR LASER A semiconductor laser has distributed Bragg reflectors (11,13) in the form of waveguides each consisting of a core layer (22,24) of polyimide or silicon nitride and cladding layers (21,23,25) or SiOx (x-2). The waveguides are monolithically integrated with the active medium (12). Alternatively the laser may have one distributed Bragg reflector and one ordinary mirror. With the dielectric materials used in the waveguides optical losses are reduced and temperature stability improved compared with known distributed Bragg reflector lasers with semiconductor waveguides.

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