Semiconductor pressure transducer

G - Physics – 01 – L

Patent

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73/70

G01L 9/04 (2006.01) G01L 9/00 (2006.01) G01L 9/06 (2006.01)

Patent

CA 1186163

Abstract of the Disclosure A transducer for sensing pressure formed of a single crystal semiconductor chip having a cavity formed in one surface, wherein a tube to communicate pressure to the cavity surrounds the cavity, wherein pressure measuring sensors are disposed opposite the cavity and wherein additional pressure-responsive sensors are disposed on the chip to provide a signal for compensating for zero shift temperature and pressure induced signals generated by the measuring sensors.

417426

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