Process for the preparation of doped 3-5 monocristalline...

C - Chemistry – Metallurgy – 30 – B

Patent

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148/2.8

C30B 15/04 (2006.01) C30B 11/00 (2006.01) C30B 15/00 (2006.01)

Patent

CA 1311402

PRECIS DE LA DIVULGATION: La présente invention concerne un procédé de préparation de semi - isolants 3-5 monocristallin par dopage, caractérisé en ce que l'on dope la charge de départ de type p avec au moins un donneur profond dû à un élément de transition. Elle concerne également l'utilisation des semi-isolants obtenus dans les domaines de l'optoélectronique et de l'électronique rapide.

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