Programmable sense amplifier for read only memory

Details Programmable sense amplifier for read only memory Programmable sense amplifier for read only memory

G - Physics

11

C

328/166, 328/177

G11C 17/00 (2006.01) G11C 7/06 (2006.01) G11C 17/12 (2006.01)

Patent

CA 1290823

Abstract PROGRAMMABLE SENSE AMPLIFIER FOR READ ONLY MEMORY A programmable sense amplifier in accordance with the present invention includes an input multiplexer which receives a plurality of data input signals from the column lines of a ROM and provides a selected one of a data input signals as a data output signal based on control signals provided to the input multiplexer. The voltage level of the data output signal corresponds to the number of 1's contained in the selected column line. A sensing stage receives the data output signal and amplifies its The amplified signal is then provided to an XOR gate which either does or does not invert the amplified signal, based upon the state of the select node to which one of the XOR gate inputs is connected. The state of the select node is determined by a programmable internal multiplexer. The internal multiplexer comprises a number of FET switching transistors corresponding to the number of data input signals. Each of the switching transistors has one of its electrode areas commonly-connected to the select node. The other area of each switching transistor is selectively, i.e. programmably, connected either to the negative supply VSS or the positive supply VCC depending upon whether or not, respectively, a number of "1"s contained in the selected column line exceeds one-half the total number of row lines of the ROM, the 1s and 0s in the selected column line having been inverted if this is the case. Thus, the select mode will be appropriately charged or discharged because the XOR gate to produce the correct sense amplifier output.

575527

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