Method of forming a thin film transistor

Details Method of forming a thin film transistor Method of forming a thin film transistor

H - Electricity

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356/149

H01L 29/78 (2006.01) H01L 21/18 (2006.01) H01L 21/44 (2006.01) H01L 21/84 (2006.01) H01L 29/786 (2006.01)

Patent

CA 1186420

-1- ABSTRACT In the formation of a thin film device, integrity of the semi- conductor-insulator and semiconductor-conductor interfaces is preserved by depositing layers of insulator, semiconductor, and conductor in successive sequence under continuous vacuum. In a preferred embodiment, the method minimizes contamination exposure of the critical interfaces between semi- conductor and gate insulator and semiconductor and source-drain contacts of a thin film transistor.

411416

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