Polycrystalline silicon interconnections for bipolar...

Details Polycrystalline silicon interconnections for bipolar... Polycrystalline silicon interconnections for bipolar...

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H01L 29/68 (2006.01) H01L 21/225 (2006.01) H01L 21/70 (2006.01) H01L 21/768 (2006.01) H01L 23/532 (2006.01)

Patent

CA 1203920

POLYCRYSTALLINE SILICON INTERCONNECTIONS FOR BIPOLAR TRANSISTOR FLIP-FLOP ABSTRACT OF THE DISCLOSURE The two transistors of a bipolar flip-flop struc- ture are interconnected by using a polycrystalline silicon/metal silicide sandwich structure. The polycrys- talline silicon is doped to correspond to the underlying regions of the transistor structures, and undesired PN junctions created thereby are eliminated by depositing refractory metal silicide on the upper surface of the poly- crystalline silicon.

414200

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