H - Electricity – 03 – H
Patent
H - Electricity
03
H
356/200, 349/59.
H03H 3/08 (2006.01) H03H 9/02 (2006.01)
Patent
CA 1252557
SAW DEVICES INCLUDING RESISTIVE FILMS Abstract of the Disclosure Each IDT (inter-digital transducer) of a SAW (surface acoustic wave) device is formed on a thin resistive doped silicon film having the same pattern as the IDT, which improves adhesion of the IDT to the substrate. The silicon film also constitutes electro- acoustic absorbers between the IDTs and edges of the substrate, and can have a linearly tapered edge adjacent to each IDT to suppress reflections at the absorber boundary. The SAW device is formed by sputtering silicon onto the substrate, subsequently forming the IDTs, and then etching the silicon from areas where it is not wanted. -1-
477949
Este Grantley O.
Maclaurin Blair K.
Streater Richard W.
Suthers Mark S.
Haley R. John
Nortel Networks Limited
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