Ion implantation into in-based group iii-v compound...

Details Ion implantation into in-based group iii-v compound... Ion implantation into in-based group iii-v compound...

H - Electricity

01

L

356/176

H01L 21/265 (2006.01)

Patent

CA 1280222

ION IMPLANTATION INTO In-BASED GROUP III-V COMPOUND SEMICONDUCTORS Abstract Implantation of a Group V ion species (e.g., phosphorus or arsenic) into an In-based Group m-v compound semiconductor (e.g., InP, InGaAs) followed by implantation of Be ions produces a shallow p-type surface layer and avoids significant in-diffusion of the dopant species. High carrier concentrations and activation efficiences are attained. The technique has application in the fabrication of FETs, APDs and ohmic contacts.

573045

Affiliated with

Also associated with

Rating

Ion implantation into in-based group iii-v compound... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implantation into in-based group iii-v compound..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implantation into in-based group iii-v compound... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1239147