Semiconductor structure with resistive field shield

Details Semiconductor structure with resistive field shield Semiconductor structure with resistive field shield

H - Electricity

01

L

356/162

H01L 29/06 (2006.01) H01L 29/90 (1985.01)

Patent

CA 1227581

- 7 - ABSTRACT SEMICONDUCTOR STRUCTURE WITH RESISTIVE FIELD SHIELD A segmented semi-insulating polysilicon (SIPOS) layer (26) is used between electrodes (20,22) making contact to the surface of a silicon device in order to shield the surface from the effects of charge on dielectric layers above the surface so as to maintain breakdown voltages. The segmenting of the SIPOS layer significantly increases the resistance thereof and thereby limits leakage generated by the layer without significantly reducing its shielding capability.

471028

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