Integrated semiconductor circuit with bipolar transistor...

Details Integrated semiconductor circuit with bipolar transistor... Integrated semiconductor circuit with bipolar transistor...

H - Electricity

01

L

356/124

H01L 23/52 (2006.01) H01L 21/768 (2006.01) H01L 23/532 (2006.01)

Patent

CA 1201218

ABSTRACT OF THE DISCLOSURE The invention relates to an integrated semiconductor circuit with bipolar transistor structure, in which the emitter region as well as the base region and the collector contact region are produced by out-diffusion of a metal silicide layer provided with a respective doping substance and deposited directly on the substrate. The metal silicide layer structures provided with the respective doping, using in particular silicides of the metals tantalum, titanium, tungsten or molybdenum, serve as additional wiring planes and permit a higher density and a very low-resistance contacting structure.

446966

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