Methods of manufacturing semiconductor devices

Details Methods of manufacturing semiconductor devices Methods of manufacturing semiconductor devices

H - Electricity

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L

356/165

H01L 21/02 (2006.01) H01L 21/30 (2006.01) H01L 21/3105 (2006.01)

Patent

CA 1215479

13 ABSTRACT: A plasma and heating treatment is performed to reduce the density of charge carrier traps adjacent the interface of an insulating layer (12) e.g. of thermally grown silicon dioxide and a semiconductor body 10. Dur- ing this plasma and heating treatment the device struc- ture so far formed (12 to 16) is covered with an addi- tional layer (20) e.g. of silane-deposited silicon con- taining hydrogen, and this additional layer (20) protects the insulating layer (12) from direct bombardment by the plasma. After the plasma and heating treatment the addi- tional layer (12) is removed from at least most areas of the semiconductor device structure (12 to 16). The heat- ing e.g. at about 400°C or less may be effected during and/or after the plasma treatment.

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