Buried contact structure for reducing resistance in...

Details Buried contact structure for reducing resistance in... Buried contact structure for reducing resistance in...

H - Electricity

01

L

356/126

H01L 27/04 (2006.01) H01L 21/74 (2006.01) H01L 29/417 (2006.01) H01L 29/45 (2006.01)

Patent

CA 1285663

YO9-85-067 BURIED CONTACT STRUCTURE FOR REDUCING RESISTANCE IN INTEGRATED CIRCUITS ABSTRACT OF THE DISCLOSURE A buried contact structure to decrease the spreading resistance of various circuit elements of semiconductor devices such as transistors and for reducing the resistance of polysilicon wires typically used in short lengths to connect the circuit elements to other metallic wires. The buried contact structure more specifically includes a phosphorous diffusion superimposed on the field implant which includes the source and/or drain of the transistor device. An overlayed layer of polysilicon is then disposed to make contact with the buried contact diffusion. The field implant used for the source and drain may, for example, be boron. The buried contact structure has a lower resistance than the field implant and therefore provides a lower resistance path for the device current.

532512

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