Semiconductor device with polycrystalline silicon active...

Details Semiconductor device with polycrystalline silicon active... Semiconductor device with polycrystalline silicon active...

H - Electricity

01

L

356/128

H01L 29/04 (2006.01) H01L 21/8238 (2006.01) H01L 27/06 (2006.01) H01L 27/092 (2006.01) H01L 27/12 (2006.01) H01L 29/786 (2006.01)

Patent

CA 1228935

ABSTRACT OF THE INVENTION A polycrystalline silicon layer is used to allow simultaneous fabrication of both N- and P-type MOSFET's on a common channel layer during integrated circuit fabrication. The polysilicon layer is between 20.ANG. and 750.ANG. thick, and preferably between 200.ANG. and 500.ANG. thick. These dimensions afford the polysilicon layer the high effective mobility, low threshold voltage and low leakage current characteristics, especially if the vapor-deposited polysilicon layer is annealed and/or ion implanted with Si+ or Ge+ after deposition. Application of the polysilicon layer over adjoining insulating and P-type semiconducting areas allows the single polysilicon layer to serve as active terminals and channels of both conductivity types of MOS transistors without intervening insulating or semiconducting layers. Deposition of the polysilicon layer in direct contact with a single-crystal substrate enhances the beneficial electrical properties of the polysilicon layer, especially if the polysilicon layer is annealed following deposition.

470775

Affiliated with

Also associated with

Rating

Semiconductor device with polycrystalline silicon active... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with polycrystalline silicon active..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with polycrystalline silicon active... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1248481