Process for selective formation of ii-vi group compound film

Details Process for selective formation of ii-vi group compound film Process for selective formation of ii-vi group compound film

H - Electricity

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H01L 21/365 (2006.01) H01L 21/36 (2006.01) H01L 21/84 (2006.01) H01L 31/032 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1322937

ABSTRACT OF THE DISCLOSURE A process for selective formation of a II-VI group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group II atoms of periodic table and a starting material for supplying the group VI atoms of periodic table, on a substrate having a non-nucleation surface (SNDS) with small nucleation density and a nucleation surface (SNDL) with larger nucleation density (NDL) than the nucleation density (NDS) of said non-nucleation surface (SNDS) and a large area sufficient for a number of nuclei to be formed and forming selectively a II-VI group compound film only on said nucleation surface (SNDL).

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