Process gas introduction and channeling system

Details Process gas introduction and channeling system Process gas introduction and channeling system

H - Electricity

01

L

356/190, 345/61

H01L 31/18 (2006.01) C23C 16/455 (2006.01) C23C 16/50 (2006.01) C23C 16/54 (2006.01) C23C 16/44 (2006.01)

Patent

CA 1206244

ABSTRACT A deposition apparatus is disclosed which includes a process gas introduction and channeling system whereby process gases are directed through the deposition chamber in a direction parallel to the direction of substrate material travel and introducing dopant profiling gas into the decomposition region of the deposition chamber in a direction of flow opposite the direction of the process gases whereby a semiconductor layer is deposited across the entire surface of the substrate material.

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