Continuous deposition of activated process gases

Details Continuous deposition of activated process gases Continuous deposition of activated process gases

C - Chemistry, Metallurgy

23

C

204/96.3, 204/16

C23C 16/54 (2006.01) C23C 16/44 (2006.01) C23C 16/452 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1247045

ABSTRACT OF THE DISCLOSURE Apparatus for and a method of continuously depositing semiconductor alloy material characterized by stress-free bonds, tetrahedral coordination and d low density of defect states. The semiconductor material is deposited onto the substrate from energetic precursor process gas, density of states reducing elements, as well as dopant gas and compensating elements. Each of said energized species are discretely introduced into a deposition region for uncontaminated deposition and surface reaction on the substrate.

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