Electrodeposited doped ii-vi semiconductor films and devices...

Details Electrodeposited doped ii-vi semiconductor films and devices... Electrodeposited doped ii-vi semiconductor films and devices...

H - Electricity

01

L

356/181, 345/23,

H01L 31/06 (2006.01) C25D 9/08 (2006.01) H01L 21/368 (2006.01) H01L 31/072 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1292547

ABSTRACT A method of electrodepositing a doped compound semiconductor film including tellurium and a metal selected from Group IIB of the Period Table of Elements by adding an effective concentration of dopant ions to the electrolyte bath. Cadmium telluride, mercury cadmium telluride and zinc cadmium telluride may be doped with copper, silver and gold. The conductivity type of the electrodeposited doped layers may be changed by a heat treatment. Thin film photovoltaic cells incorporating the doped layer to form a heterojunction with a semiconductor layer of the opposite conductivity type show substantial improvements in open circuit voltage, fill factor and efficiency over similar devices employing undoped electrodeposited layers.

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