Interconnection device between the cells of a pre- implanted...

Details Interconnection device between the cells of a pre- implanted... Interconnection device between the cells of a pre- implanted...

H - Electricity

01

L

356/133

H01L 23/52 (2006.01) H01L 23/522 (2006.01) H01L 23/66 (2006.01)

Patent

CA 1216963

ABSTRACT OF THE DISCLOSURE The invention concerns pre-implanted circuits in a rapid semi-conductor such as GaAs, comprising a network of cells formed of active and passive components. The cells are supplied but are not interconnected between one another. According to the invention, the interconnection between the cells is made by capacitive or magnetic coupling between two metallization levels separated by an insulating layer. Between a component of a first cell and a component of a second cell, both pre-implanted in a substrate, the interconnection made by means of microstrips supported by the substrate and in ohmic contact with the said components and microstrips supported by an insulating layer, miceostrips and insulator forming capacities in the zones where there is covering. One application of this invention is to rapid circuits for telecommunications or Hertz and radar beams.

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