Semiconductor device with annular region comprising a...

Details Semiconductor device with annular region comprising a... Semiconductor device with annular region comprising a...

H - Electricity

01

L

356/162

H01L 29/06 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1211866

PHB 32.950 22 ABSTRACT: At least one annular region (11,12,...) extends around an active device region (10) and is located within the spread of a depletion layer (25) from a reverse- biased p-n junction (20) formed by the device region (10) to increase the breakdown voltage of the junction (20). The device region (10) and/or at least one inner annular region (11, 12,...) includes at least one shallower por- tion (10b, 11b, ...) which extends laterally outwards from a deep portion (10a, 11a, 12a, ...) and faces the surrounding annular region to change the spacing and depth relationship of these regions. This permits high punch- through voltages to be achieved between the regions (10, 11, 12, ...) while reducing peak fields at the bottom outer corner of the regions (10, 11, 12, ...). Inwardly- extending shallow portions (11c, 12c, ...) may also be included. The shallow portions (10b, 11b, 11c, 12c ...) may extend around the whole of a perimeter of the region or be localized where higher electrostatic fields may occur around the perimeter.

446077

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