Nonvolatile memory element

Details Nonvolatile memory element Nonvolatile memory element

G - Physics

11

C

352/40.4

G11C 11/44 (2006.01) H01L 29/82 (2006.01)

Patent

CA 1311053

Abstract of the Disclosure A novel nonvolatile memory element or cell comprising a memory means consisting of at least one superconducting ring (21, 22) and a detector means consisting of a MOSFET. The superconducting ring and the MOSFET are arranged in such a manner that a magnetic flux created by the superconducting ring (21, 22) passes through a channel zone of the MOSFET. Information is held in the superconducting ring in a form of permanent current and is detected electrically as variation in the conductivity of the channel zone of the MOSFET.

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