H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/178
H01L 29/78 (2006.01) H01L 21/285 (2006.01) H01L 29/15 (2006.01) H01L 29/45 (2006.01) H01L 29/778 (2006.01)
Patent
CA 1277440
ABSTRACT A compound semiconductor device having a channel layer which is made of periodically laminated structure of thin-film layers of compound semiconductor substantially being different from each other. The difference of energy between the conduction band and the valence band of com- pound semiconductor thin-film layers of one side is less than that of the other side thin-film layers, moreover the electron mobility in low electric field application in the thin-film layers of compound semiconductor of one side is greater than that of the other side thin-film layers, besides the electron mobility in high electric field application in the thin-film layers of compound semi- conductor of one side is less than that of the other side thin-film layers, and/or the impact ionization of valence electron generated in high electric field application takes place earlier than the thin-film layers of compound semiconductor of the other side. While conduction elec- trons preferentially flow through the thin-film layers of compound semiconductor of one side in low electric field application, and conversely, while conduction electron having substantial energy intensified by acceleration preferentially flow through other side thin-film layers in high electric field application.
535564
Bereskin & Parr
Sumitomo Electric Industries Ltd.
LandOfFree
Compound semiconductor device with laminated channel layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Compound semiconductor device with laminated channel layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor device with laminated channel layer will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1262298