Microwave method of making semiconductor members

Details Microwave method of making semiconductor members Microwave method of making semiconductor members

H - Electricity

01

L

356/176

H01L 21/363 (2006.01) C23C 16/511 (2006.01) G03G 5/082 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1244964

ABSTRACT OF THE DISCLOSURE A process and system for making semiconductor alloys and members with high reaction gas conver- sion efficiencies and at high deposition rates utilizes microwave energy to form a deposition plasma. The microwave energy forms depositing species and molecular ions of a semiconductor ele- memt and the potential of the plasma is controlled to alter the ion bombardment of the depositing species. The process and system include coupling mi- crowave energy into a substantially enclosed reac- tion vessel containing a substrate and depositing semiconductor alloys onto the substrate from a re- action gas introduced into the vessel. The semi- conductor alloys are particularly suited for rela- tively thick photoconductive members. The photo- conductive member includes at least a bottom blocking layer and a photoconductive layer. The photoconductive member can be formed in a negative or positive charge type configuration. The mem- bers also can include a top blocking enhancement layer. -1-

505668

Affiliated with

Also associated with

Rating

Microwave method of making semiconductor members does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microwave method of making semiconductor members, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microwave method of making semiconductor members will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1263973