Method for preparing thin film of superconductor

Details Method for preparing thin film of superconductor Method for preparing thin film of superconductor

H - Electricity

01

L

204/96.1, 148/3.

H01L 39/24 (2006.01) C23C 14/35 (2006.01) C30B 23/02 (2006.01) C30B 29/22 (2006.01)

Patent

CA 1328844

ABSTRACT OF THE DISCLOSURE A method for preparing a thin film of superconductor on a substrate by sputtering. A target prepared by an oxide containing Ba, Y and Cu in atomic ratios Cu/Y of 2.5 to 3.5 and Ba/Y of 1.8 to 2.2 is employed to form a superconducting thin film on a substrate at a temperature of 600 to 800°C in an atmosphere having total gas pressure of 1 x 10-2 to 5 x 10-2 Torr. and containing Ar and O2 with an O2 content of 5 to 80 vol.%. The thin film thus formed is subjected to heat treatment at a temperature of 600 to 930°C for 1 to 30 hours. The thin film after the heat treatment is cooled at a rate not more than 4°C/min. The film forming surface of the substrate is prepared by the 1100) surface or the (110) surface of a singlecrystal subdtrate which is lattice-matched with the (100) surface or the (110) surface of a crystal substrate of Y1Ba2Cu3O7-n, where n represents number satisfying 0 ? n < 1.

568052

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