Semiconductor device interconnection pattern with rim

Details Semiconductor device interconnection pattern with rim Semiconductor device interconnection pattern with rim

H - Electricity

01

L

356/134

H01L 23/52 (2006.01) H01L 21/768 (2006.01) H01L 23/522 (2006.01) H01L 23/532 (2006.01)

Patent

CA 1203643

19 "ABSTRACT": "Semiconductor device and method of manufacturing such a semiconductor device". With the aid of anisotropic etching techniques. such as plasma etching and reactive ion etching, inter- connection patterns can be obtained having accurately de- fined rims. According to the invention, these rims are provided inter alia at the area of contacts to be formed. The contacting zone thus formed, which has an accurately defined form, can be manufactured with rims of, for example, a refractory metal or polycrystalline silicon. In the latter case, a semiconductor zone (emitter zone, base contact zone, source, drain etc.) can be formed through the poly- crystalline silicon in the subjacent semiconductor body. In this manner, very small structures can be obtained, whilst moreover different kinds of transistors can be manu- factured in the same semiconductor body.

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