C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
261/6
C04B 35/56 (2006.01) C04B 35/565 (2006.01) C04B 35/575 (2006.01) C04B 35/58 (2006.01)
Patent
CA 1314295
64881-307 ABSTRACT OF THE DISCLOSURE Disclosed is an SiC complex sintered body consisting essentially of 20 to 99 wt% of SiC, 80 to 0.5 wt% of at least one compound selected from the group consisting of W2B5 and MoB2, and 0.5 to 5 wt% of at least one material selected from the group consisting of boron, carbon, and boron carbide. A process for producing the sintered body is also disclosed. The process com- prises (i) preparing a powder mixture which consists essentially of 20 to 99 wt% of SiC powder having an average particle dia- meter of not more than 5 µm, 80 to 0.5 wt% of at least one compound selected from the group consisting of W2B5 and MoB2, and 0.1 to 5 wt%, when calculated as boron, of boron or a compound containing boron and 0.1 to 5 wt%, when calculated as carbon, of carbon or an organic compound producing carbon, (ii) molding the mixture, and (iii) firing the molding in a temperature range from 1,900 to 2,500°C in vacuum or in an inert atmosphere.
573126
Ngk Insulators Ltd.
Smart & Biggar
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