Method for providing a metal-semiconductor contact

Details Method for providing a metal-semiconductor contact Method for providing a metal-semiconductor contact

H - Electricity

01

L

356/184

H01L 21/00 (2006.01) H01L 21/027 (2006.01) H01L 21/60 (2006.01)

Patent

CA 1311565

ABSTRACT In a process for preparing a silicon-based semiconductor device, prior to the deposition of dielectric and metal for forming the metal interconnect contact, a lift-off mask and metal deposition provide a metal plate contact in the region of the substrate to which the metal interconnect contact is to be connected. The metal plate contact provides protection for the substrate region when the dielectric is being etched to provide a path to the substrate region. The metal interconnect contact is in contact with the metal plate contact rather than directly to the substrate region. This metal plate contact can be a barrier material or, if a second metal layer is connected to the metal plate contact, the second metal layer can be a second barrier layer.

540748

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