Integrated circuit bipolar memory cell

Details Integrated circuit bipolar memory cell Integrated circuit bipolar memory cell

G - Physics

11

C

356/124, 352/82.

G11C 11/40 (2006.01) G11C 11/411 (2006.01) G11C 15/00 (2006.01) H01L 27/06 (2006.01) H01L 27/102 (2006.01)

Patent

CA 1189621

-18- INTEGRATED CIRCUIT BIPOLAR MEMORY CELL Abstract of the Disclosure A static bipolar random access memory cell includes first and second transistors formed in epitaxial silicon pockets 41 and 42 in a substrate. The collectors 19 and 19' and bases 15 and 15' of the transistors are inter- connected with polycrystalline silicon 21 doped to match the conductivity types of the regions contacted. Undesired PN junctions 40 and 40' created thereby are shorted using an overlying layer of a metal silicide 25. In a region over- lying the N conductivity type polycrystalline silicon 23 or 23', the metal silicide is removed and a PN junction 37 or 37' created by depositing P conductivity type polycrystal- line silicon 35c or 35c'. If desired additional P type polycrystalline silicon 35a and 35b may be deposited across the surface of the epitaxial layer where the base regions of the two transistors are formed to reduce the base series resistance.

414191

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