Compound semiconductor device with layers having different...

Details Compound semiconductor device with layers having different... Compound semiconductor device with layers having different...

H - Electricity

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H01L 29/04 (2006.01) H01L 29/10 (2006.01) H01L 29/15 (2006.01) H01L 29/205 (2006.01) H01L 29/778 (2006.01) H01L 29/812 (2006.01)

Patent

CA 1256590

- 1 - Abstract In a compound semiconductor device such as field effect transistor, the channel region comprises alter- nate compound semiconductor layers having different lattice constants so that the crystal structure or molecular arrangement of the compound semiconductor is changed. This changes the energy band structure of the semiconductor of one of the alternate layers to increase the electron mobility in the channel region and avoid the deterioration of this mobility when sub- jected to a high electric field or high temperature that has been experienced in the prior art.

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