Mobility-modulation field-effect transistor

Details Mobility-modulation field-effect transistor Mobility-modulation field-effect transistor

H - Electricity

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356/149

H01L 29/80 (2006.01) H01L 29/36 (2006.01) H01L 29/43 (2006.01) H01L 29/772 (2006.01) H01L 29/778 (2006.01)

Patent

CA 1217575

MOBILITY-MODULATION FIELD-EFFECT TRANSISTOR Abstract: A mobility modulation FRET utilizes a mobility- modulation system in which the mobility µ of the carriers within the channel is modulated byway signal voltage applied to gate electrodes. More particularly, in order to eliminate the limit in the response speed dependent upon the channel transit time of the carriers, a mobility-modulation system in which the channels are so formed as to vary the carrier mobility in response to the applied gate voltage is utilized, which is different from the carrier density modulation system, to thereby increase the response speed considerably.

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