Resonant-tunneling device, and mode of device operation

Details Resonant-tunneling device, and mode of device operation Resonant-tunneling device, and mode of device operation

G - Physics

11

C

356/23, 352/81.1

G11C 11/56 (2006.01) G11C 11/38 (2006.01) H01L 29/80 (2006.01) H01L 29/88 (2006.01)

Patent

CA 1282871

RESONANT-TUNNELING DEVICE, AND MODE OF DEVICE OPERATION Abstract A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g, in apparatus designed for ternary logic operations, frequency multiplication, waveform scrambling, memory operation, parity-bit generation, and coaxial-line driving. The device can be made by layer deposition on a substrate and includes a resonant-tunneling structure between contacts such that side-by-side first and third contacts are on one side, and a second contact is on the opposite side of the resonant-tunneling structure. Disclosed further are (two-terminal) resonant-tunneling diodes as incorporated in memory devices, e.g., in lieu of 2-transistor flip-flops; room-temperature device operation; and devices comprising an essentially undoped accelerator region between an emitter contact and a resonant-tunneling structure.

582271

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