Semiconductor super lattice device

Details Semiconductor super lattice device Semiconductor super lattice device

H - Electricity

01

L

356/181

H01L 27/12 (2006.01) H01L 29/15 (2006.01) H01L 29/778 (2006.01)

Patent

CA 1262293

ABSTRACT A compound semiconductor device having a channel layer which is fabricated by alternately laminating an InxGa1-xAs compound semiconductor layer (0.7 ? x ? 1.0) with thickness of 16 atomic planes or less, and an InyGa1-yAs compound semiconductor layer (0 ? y ? 0.3) with thickness of 14 atomic planes or less, so that the thick- ness of the former is greater than that of the latter, in which n-type impurities are doped only in the InyGa1-yAs layer (0 ? y ? 0.3) side, and a ratio In/Ga on the whole is set at 1.1 or higher.

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