Method of plasma etching a substrate with a gaseous...

Details Method of plasma etching a substrate with a gaseous... Method of plasma etching a substrate with a gaseous...

C - Chemistry, Metallurgy

23

C

204/96.05

C23C 14/34 (2006.01) B01J 19/08 (2006.01) C09K 13/00 (2006.01) H01L 21/306 (2006.01) H01L 21/3065 (2006.01) H01L 21/311 (2006.01)

Patent

CA 1281307

ABSTRACT A plasma etching process is disclosed wherein the substrate to be etched is first exposed to an etchant gas containing a volatile organohalide. When the etch rate is stabilized, the organohalide in the etchant gas is replaced by oxygen whereby the etch rate of the substrate is immediately increased to a substantially higher value.

502807

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