H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/25, 352/82
H01L 27/10 (2006.01) H01L 21/762 (2006.01) H01L 21/82 (2006.01) H01L 21/8242 (2006.01) H01L 27/102 (2006.01) H01L 27/108 (2006.01)
Patent
CA 1258124
ABSTRACT A high density integrated circuit structure, for example a dynamic memory cell, is described which includes an active/passive device in combination with a capacitor structure. The capacitor structure is of the polysilicon-oxide-silicon type and is formed on the sidewalls of a mesa-shaped and dielectrically isolated region of silicon material resulting from the formation of an isolation trench in the silicon. The trench is filled with a plastic material, such as polyimide. The capacitor is formed by the isolated region of silicon material which functions as the first capacitor plate, a doped polysilicon layer provided on the vertical walls of the mesa serving as the second capacitor plate and a thin dielectric layer interposed between the two plates serving as the capacitor's dielectric. Since the polysilicon is wrapped around the periphery of the mesa as a coating on the vertical sidewalls thereof, it gives rise to a large storage capacitance without an increase in the cell size.
508350
Goth George R.
Malaviya Shashi D.
International Business Machines Corporation
Saunders Raymond H.
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