Method for forming deposited film

Details Method for forming deposited film Method for forming deposited film

H - Electricity

01

L

117/85, 204/96.3

H01L 21/205 (2006.01) C23C 16/24 (2006.01) C23C 16/452 (2006.01)

Patent

CA 1293162

ABSTRACT OF THE DISCLOSURE A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (B) for formation of a band gap controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a deposited film controlled in band gap on a substrate existing in the film forming space.

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