G - Physics – 01 – R
Patent
G - Physics
01
R
356/117, 324/45
G01R 31/26 (2006.01) G01R 31/265 (2006.01)
Patent
CA 1225435
ABSTRACT OF THE DISCLOSURE A contactless rf technique for measurement of the carrier lifetime from the photoconductivity induced in silicon wafers by a flash of infrared light. The carrier lifetime is inferred from the photoconductivity decay.
436423
Borden Ladner Gervais Llp
Exxon Research And Engineering Company
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